STP4925 Description
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management, and other battery powered circuits where high-side switching SOP-8.
STP4925 Key Features
- 30V/-7.2A, RDS(ON) = 20mΩ (Typ.) @VGS =-10V
- 30V/-5.6A, RDS(ON) = 25mΩ @VGS = -4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design PART MARKING SOP-8 Y：Year Code A：date Code B：Process Code STANSON TECHNOLOGY 120 Bentl