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DN3535N8-G - N-Channel Depletion-Mode Vertical DMOS FETs

Download the DN3535N8-G datasheet PDF. This datasheet also covers the DN3535 variant, as both devices belong to the same n-channel depletion-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DN3535_Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DN3535N8-G
Manufacturer Supertex
File Size 192.60 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet DN3535N8-G Datasheet

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Other Datasheets by Supertex

Part Number Description
DN3535 N-Channel Depletion-Mode Vertical DMOS FETs
DN3525 N-Channel Depletion-Mode Vertical DMOS FETs
DN3525N8-G N-Channel Depletion-Mode Vertical DMOS FETs
DN3545 N-Channel Depletion-Mode Vertical DMOS FETs
DN3125 N-Channel Depletion-Mode Vertical DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs DN3535 Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Power supply circuits ►► Telecom General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.