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DN3535N8-G - N-Channel Depletion-Mode Vertical DMOS FETs

Download the DN3535N8-G datasheet PDF. This datasheet also covers the DN3535 variant, as both devices belong to the same n-channel depletion-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (DN3535_Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DN3535N8-G
Manufacturer Supertex
File Size 192.60 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet DN3535N8-G Datasheet

General Description

This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Overview

Supertex inc.

N-Channel Depletion-Mode Vertical DMOS FETs DN3535.

Key Features

  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.