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DN3535N8-G Datasheet Preview

DN3535N8-G Datasheet

N-Channel Depletion-Mode Vertical DMOS FETs

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Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
DN3535
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
General Description
This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Part Number Package Option Packing
DN3535N8-G TO-243AA (SOT-89) 2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
350V
10Ω
Pin Configuration
DRAIN
IDSS
(min)
200mA
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSX
BVDGX
±20V
Operating and storage
temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
TO-243AA (SOT-89)
θja
133OC/W
Notes:
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Product Marking
DN5SW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-DN3535
A062713
Supertex inc.
www.supertex.com




Supertex

DN3535N8-G Datasheet Preview

DN3535N8-G Datasheet

N-Channel Depletion-Mode Vertical DMOS FETs

No Preview Available !

DN3535
Thermal Characteristics
Package
ID
(continuous)
ID
(pulsed)
TO-243AA
230mA
500mA
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Power Dissipation
@TA = 25OC
1.6W
IDR
230mA
IDRM
500mA
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ
Max
Units Conditions
BVDSS
VGS(OFF)
ΔVGS(OFF)
IGSS
Drain-to-source breakdown voltage
Gate-to-source off voltage
Change in VGS(OFF) with temperature
Gate body leakage current
ID(OFF) Drain-to-source leakage current
IDSS
RDS(ON)
Saturated drain-to-source current
Static drain-to-source on-state
resistance
350 - - V VGS = -5.0V, ID = 1.0µA
-1.5 - -3.5 V VDS = 15V, ID = 10µA
- - -4.5 mV/OC VDS = 15V, ID = 10µA
- - 100 nA VGS = ±20V, VDS = 0V
- - 1.0 µA VDS = Max rating, VGS = -5.0V
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 125OC
200 -
- mA VGS = 0V, VDS = 15V
- - 10 Ω VGS = 0V, ID = 150mA
ΔRDS(ON) Change in RDS(ON) with temperature
- - 1.1 %/OC VGS = 0V, ID = 150mA
GFS Forward transconductance
200 -
- mmho VDS = 10V, ID = 100mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- - 360
-
-
40
pF
VGS = -5.0V, VDS = 25V,
f = 1.0MHz
- - 10
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
-
-
-
-
-
15
20
20
VDD = 25V,
ns
ID = 150mA,
RGEN = 25Ω,
- - 30
VGS = 0V to -10V
VSD Diode forward voltage drop
- - 1.8 V VGS = -5.0V, ISD = 150mA
trr
Notes:
Reverse recovery time
- 800 -
ns VGS = -5.0V, ISD = 150mA
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tf
VDD
OUTPUT
0V
10%
90%
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Doc.# DSFP-DN3535
A062713
Supertex inc.
2 www.supertex.com



Part Number DN3535N8-G
Description N-Channel Depletion-Mode Vertical DMOS FETs
Maker Supertex
Total Page 5 Pages
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