TP0606
Overview
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
- Low threshold (-2.4V max.) *
- High input impedance *
- Low input capacitance (80pF typ.) *
- Fast switching speeds *
- Low on-resistance *
- Free from secondary breakdown *
- Low input and output leakage
