* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices JO(ON) (min) 6.0A 6.0A Applications
VN1220N1 Datasheet (238.08 KB)
VN1220N1
Supertex Inc
238.08 KB
N-channel enhancement-mode vertical dmos power fets.
" upertexinc. VN12C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVossl BVDGS 160V 200V ROS(ON) (max) In 1n Feat.
📁 Related Datasheet
VN1220N2 N-Channel Enhancement-Mode Vertical DMOS Power FETs (Supertex Inc)
VN1220N5 N-Channel Enhancement-Mode Vertical DMOS Power FETs (Supertex Inc)
VN1220ND N-Channel Enhancement-Mode Vertical DMOS Power FETs (Supertex Inc)
VN1204N1 N-Channel Enhancement-Mode Vertical DMOS Power FETs (Supertex Inc)
VN1204N2 N-Channel Enhancement-Mode Vertical DMOS Power FETs (Supertex Inc)
VN1204N5 N-Channel Enhancement-Mode Vertical DMOS Power FETs (Supertex Inc)
VN1206 N-Channel MOSFET (Supertex Inc)
VN1206B N-Channel MOSFET (Siliconix)
VN1206D N-Channel MOSFET (Siliconix)
VN1206L N-Channel MOSFET (Siliconix)
