MMBT5401LT1 transistor equivalent, pnp transistor.
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1.
Absolute Maximum Ratings
* Maximum Temperatures Stora.
requiring high breakdown voltages.
Features
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* .
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
Features
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1.
Absolute Maximum Ratings
* .
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