MMBT5401LT1 Description
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
MMBT5401LT1 Key Features
- High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
- plements to NPN Type MMBT5551LT1
- Part: MMBT5401LT1
- Manufacturer: TGS
- Size: 27.44 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MMBT5401LT1 | High Voltage Transistor |
WEJ |
MMBT5401LT1 | TRANSISTOR |