MMBT5401LT1
Overview
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
- High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
- Complements to NPN Type MMBT5551LT1.
| Part | MMBT5401LT1 |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | TGS |
| Size | 27.44 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MMBT5401LT1 | Motorola Semiconductor | High Voltage Transistor |
| MMBT5401LT1 | WEJ | TRANSISTOR |
| MMBT5401L | onsemi | High Voltage PNP Silicon Transistor |
| MMBT5401 | Fairchild Semiconductor | PNP General Purpose Amplifier |
| MMBT5401DW | Kexin Semiconductor | PNP Transistor |