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MMBT5401LT1 - PNP Transistor

General Description

The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.

Key Features

  • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA).
  • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 160 V VCEO Collector to Emitter Voltage 150 V VEBO Emitter to Base Voltage 5 V IC Collector.

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Datasheet Details

Part number MMBT5401LT1
Manufacturer TGS
File Size 27.44 KB
Description PNP Transistor
Datasheet download datasheet MMBT5401LT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................. -55~+150 °C Junction Temperature ..................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................