TC2896 Description
The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
TC2896 Key Features
- 5 W Typical Power at 6 GHz
- 8 dB Typical Linear Power Gain at 6 GHz
- High Linearity: IP3 = 47 dBm Typical at 6 Ghz
- High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
- Suitable for High Reliability Application
- Lg = 0.6 µm, Wg = 12 mm
- Tight Vp ranges control
- High RF input power handling capability
- 100 % DC and RF Tested
- Flange Ceramic Package DESCRIPTION