BDX66A
PNP DARLINGTON SILICON POWER TRANSISTOR
BDX 66, A, B, C
- Hermetic Metal TO3 Package.
- Ideal for General Purpose Low Frequency Switching Applications
- Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEO VCBO VEBO ICM IB PD
TJ Tstg
BDX66 66A 66B 66C
Collector
- Emitter Voltage
-60V -80V -100V -120V
Collector
- Base Voltage
-60V -80V -100V -120V
Emitter
- Base Voltage
-5V
Peak Collector Current
-20A
Base Current
-0.25A
Total Power Dissipation at TC = 25°C
150W
De-rate Linearly Above 25°C
0.855 W/°C
Junction Temperature Range
-55 to +200°C
Storage Temperature Range
-55 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 1.17
Units °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab...
