logo

TSCDF08065G1 Datasheet

Download Datasheet
Taiwan Semiconductor · TSCDF08065G1 File Size : 343.19KB · 4 hits

Features and Benefits


● Max junction temperature 175°C
● MPS structure for high ruggedness to forward current surge events
● High-speed switching possible
● High forward surge capability
● High-frequency operation
● Positive temperature coefficient on VF
● RoHS compliant
● Halogen-free KEY PARAMETERS PARAMETER VALUE UN.

TSCDF08065G1 TSCDF08065G1 TSCDF08065G1
TAGS
650V
SiC
Merged
PIN
Schottky
Diode
TSCDF08065G1
TSCD1045P5Y
TSCD12WS
Stock and Price
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy