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Merged

Merged DataSheet

Taiwan Semiconductor

TSCDT08065G1 - 650V SiC Merged PIN Schottky Diode

 · 8 Hits ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward su...
Taiwan Semiconductor

TSCDT12065G1 - 650V SiC Merged PIN Schottky Diode

 · 7 Hits ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward su...
Taiwan Semiconductor

TSCDT20065G1 - 650V SiC Merged PIN Schottky Diode

 · 7 Hits ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward su...
Samsung semiconductor

S1D2502A01 - VIDEO AMP MERGED OSD PROCESSOR

 · 6 Hits VIDEO AMP PART OSD PART • 3-channel R/G/B video amplifier, 175MHz @f-3dB • Built in 1K-byte SRAM • I2C bus control items • 448 ROM fonts (each f...
Samsung semiconductor

S1D2502B01 - VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS

 · 6 Hits VIDEO AMP PART • • 3-channel R/G/B video amplifier, 175MHz @f-3dB I2C bus control items — Contrast control: -38dB — Sub contrast control for each chan...
Samsung semiconductor

S1D2514X01 - Video AMP Merged OSD Processor

 · 6 Hits VIDEO AMP PART • • 3-channel R/G/B video amplifier, 150MHz @f-3dB I2C bus control items — Contrast control: -38dB - Sub contrast control for each chan...
Vishay

VS-3C10ET07T-M3 - 650V Power SiC Gen 3 Merged PIN Schottky Diode

 · 6 Hits • Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF t...
Samsung

KB2502 - VIDEO AMP MERGED OSD PROCESSOR

 · 5 Hits VIDEO AMP PART • • 3-channel R/G/B video amplifier, 175MHz @f-3dB I2C bus control items - Contrast control: -38dB - Sub contrast control for each chan...
Samsung

KB2514 - VIDEO AMP MERGED OSD PROCESSOR

 · 5 Hits VIDEO AMP PART • • 3-channel R/G/B video amplifier, 150MHz @f-3dB I2C bus control items - Contrast control: -38dB - Sub contrast control for each chan...
UnitedSiC

UJ3D06560KSD - 650V 60A SiC Merged PiN-Schottky Diode

 · 5 Hits • 175°C maximum operating junction temperature • Easy paralleling • Extremely fast switching not dependent on temperature • No reverse or forwar...
Vishay

VS-3C12ET07S2L-M3 - 650V Gen 3 Power SiC Merged PIN Schottky Diode

 · 4 Hits • Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF t...
Taiwan Semiconductor

TSCDF08065G1 - 650V SiC Merged PIN Schottky Diode

 · 4 Hits ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward su...
Taiwan Semiconductor

TSCDH30065G1 - 650V SiC Merged PIN Schottky Diode

 · 3 Hits ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward su...
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