TSCDF08065G1 Datasheet - Taiwan Semiconductor

TSCDF08065G1 650V SiC Merged PIN Schottky Diode

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TSCDF08065G1 Features

* Max junction temperature 175°C

* MPS structure for high ruggedness to forward current surge events

* High-speed switching possible

* High forward surge capability

* High-frequency operation

* Positive temperature coefficient on VF

* RoHS compliant

* Halogen-free KE

TSCDF08065G1-TaiwanSemiconductor.pdf

TSCDF08065G1 Datasheet Preview — Preview of TSCDF08065G1 PDF

Datasheet Details

Part number:

TSCDF08065G1

Manufacturer:

Taiwan Semiconductor

File Size:

343.19 KB

Description:

650v sic merged pin schottky diode.

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TSCDF08065G1 TSCDF08065G1 650V SiC Merged PIN Schottky Diode Taiwan Semiconductor

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