TSCDT20065G1 Datasheet (Taiwan Semiconductor) - 650V SiC Merged PIN Schottky Diode

TSCDT20065G1, 650V SiC Merged PIN Schottky Diode

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TSCDT20065G1 Features

* Max junction temperature 175°C

* MPS structure for high ruggedness to forward current surge events

* High-speed switching possible

* High forward surge capability

* High-frequency operation

* Positive temperature coefficient on VF

* RoHS compliant

* Halogen-free KE