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TSCDT20065G1

650V SiC Merged PIN Schottky Diode

TSCDT20065G1 Features

* Max junction temperature 175°C

* MPS structure for high ruggedness to forward current surge events

* High-speed switching possible

* High forward surge capability

* High-frequency operation

* Positive temperature coefficient on VF

* RoHS compliant

* Halogen-free KE

TSCDT20065G1 General Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr.

TSCDT20065G1 Datasheet (378.23 KB)

Preview of TSCDT20065G1 PDF

Datasheet Details

Part number:

TSCDT20065G1

Manufacturer:

Taiwan Semiconductor

File Size:

378.23 KB

Description:

650v sic merged pin schottky diode.

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TSCDT20065G1 650V SiC Merged PIN Schottky Diode Taiwan Semiconductor

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