Description
RATINGS AND CHARACTERISTICS CURVES
(TA=25oC unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150
INSTANTANEOUS FORWARD CURRENT (A)
FIG.2 TYPICAL FORWARD CHARACTERISTICS
100 TSF20H100C
AVERAGE FORWARD CURRENT (A)
10 Tj=150oC 1 Tj=125oC Tj=100oC 0.1 Tj=25oC 0.01 0 0.2 0.4 0.6 0.8 1
FORWARD VOLTAGE (V)
TSF20H120C
WITH HEATSINK 4in x 6in x 0.25in Al-Plate
TSF20H150C
CASE TEMPERATURE (oC)
FIG.3 TYPICAL FORWARD CHARACTERISTICS
1
Features
- - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
ITO-220AB.