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TSF20H120C Datasheet, Taiwan Semiconductor

TSF20H120C rectifier equivalent, trench mos barrier schottky rectifier.

TSF20H120C Avg. rating / M : 1.0 rating-16

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TSF20H120C Datasheet

Features and benefits

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge ca.

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TSF20H120C Page 1 TSF20H120C Page 2 TSF20H120C Page 3

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