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TSM4424 - 20V N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Full PDF Text Transcription for TSM4424 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM4424. For precise diagrams, and layout, please refer to the original PDF.

TSM4424 20V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS...

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. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 20 30 11.2 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package Packing TSM4424CS RLG SOP-8 2.