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TSM4459 - 30V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Full PDF Text Transcription (Reference)

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TSM4459 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 5.2 @ VGS = -10V 9.5 @ VGS = -4.5V ID (A) -17 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Converter Battery Power System Ordering Information Part No. Package Packing TSM4459CS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product P-Channel MOSFET Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Note a.