TSM60N03 Datasheet N-Channel Power MOSFET

Manufacturer: Taiwan Semiconductor

Overview: TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.

Datasheet Details

Advanced Trench Technology.
Low RDS(ON) 4.5mΩ (Max. ).
Low gate charge typical @ 12nC (Typ. ).
Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25℃ VGS Continuous Drain Current Drain Current-Pulse.