Datasheet Summary
TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor
Product Specification
Features
- 100 V enhancement mode GaN power switch
- Bottom-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 100 MHz)
- Reverse current capability
- Zero reverse recovery loss
- Small 7.6 x 4.6 mm2 PCB footprint
- Source Sense (SS) pin for optimized gate drive
- Single diffusion lot available
- RoHS pliant
- Enhanced wafer level reliability
- HiRel qualification flow
- Obsolescence support
Application...