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TDG100E90BEP - 100V E-mode GaN transistor

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Teledyne

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TDG100E90BEP 100V E-mode GaN transistor by Teledyne - Datasheet Preview — Datasheet preview – TDG100E90BEP

Datasheet Details

Part number	TDG100E90BEP
Manufacturer	Teledyne
File Size	2.93 MB
Description	100V E-mode GaN transistor
Datasheet	TDG100E90BEP Datasheet
Additional preview pages of the TDG100E90BEP datasheet.

Product details

Description

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology.

Features

100 V enhancement mode GaN power switch.
Bottom-side cooled configuration.
RDS(on) = 7 mΩ.
IDS(max) = 90 A.
Ultra-low FOM Island Technology® die.
Low inductance GaNPX® package.
Easy gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 100 MHz).
Reverse current capability.
Zero reverse recovery loss.
Small 7.6 x 4.6 mm2 PCB f.

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Published: Aug 9, 2023 |