Datasheet4U Logo Datasheet4U.com

TDG650E602TSP - Space GaN E-mode Transistor

📥 Download Datasheet

Datasheet Details

Part number TDG650E602TSP
Manufacturer Teledyne
File Size 1.61 MB
Description Space GaN E-mode Transistor
Datasheet download datasheet TDG650E602TSP Datasheet

General Description

The TDG650E602TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Overview

TDG650E602TSP Space GaN E-mode Transistor Product Specficaton.

Key Features

  • Class one / Level one Production Screening.
  • Lot Acceptance Test options available.
  • 650 V enhancement mode power transistor.
  • Top-cooled, low inductance GaNPX® package.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency ( > 10 MHz).
  • Fast and controllable fall and rise times.

More Datasheets from Teledyne

Part Number Description
TDG650E60 Bottom- or Top-side Cooled 650V E-mode GaN FET
TDG650E601TSP Space GaN E-mode Transistor
TDG650E30BSP Bottom-side cooled 650 V E-mode GaN transistor
TDG100E90BEP 100V E-mode GaN transistor
TDGD271 Isolated Gate Drivers
TDGD274 Isolated Gate Drivers