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TDG100E90BEP - 100V E-mode GaN transistor

Description

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology.

The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency.

Features

  • 100 V enhancement mode GaN power switch.
  • Bottom-side cooled configuration.
  • RDS(on) = 7 mΩ.
  • IDS(max) = 90 A.
  • Ultra-low FOM Island Technology® die.
  • Low inductance GaNPX® package.
  • Easy gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 100 MHz).
  • Reverse current capability.
  • Zero reverse recovery loss.
  • Small 7.6 x 4.6 mm2 PCB f.

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Datasheet Details

Part number TDG100E90BEP
Manufacturer Teledyne
File Size 2.93 MB
Description 100V E-mode GaN transistor
Datasheet download datasheet TDG100E90BEP Datasheet
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TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor Product Specification Features • 100 V enhancement mode GaN power switch • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM Island Technology® die • Low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 100 MHz) • Reverse current capability • Zero reverse recovery loss • Small 7.6 x 4.
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