TDG100E90BEP Description
The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown bined with high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current performance.
TDG100E90BEP Key Features
- 100 V enhancement mode GaN power switch
- Bottom-side cooled configuration
- RDS(on) = 7 mΩ
- IDS(max) = 90 A
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 100 MHz)
- Reverse current capability