TDG650E601TSP Overview
The TDG650E601TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The part based on GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.
TDG650E601TSP Key Features
- Class one / Level one Production Screening
- Lot Acceptance Test options available
- 650 V enhancement mode power transistor
- Top-cooled, low inductance GaNPX® package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency ( > 10 MHz)