TDG650E60
TDG650E60 is Bottom- or Top-side Cooled 650V E-mode GaN FET manufactured by Teledyne Technologies.
TDG650E60 Bottom- or Top-side Cooled 650 V E-mode GaN FET
Product Specification
April 2020
Features
- 650 V enhancement mode power switch with P-GaN gate structure
- Bottom- or Top-side cooled configuration
- RDS(on) = 25 mΩ (typ)
- IDS(max) = 60 A
- Ultra-low FOM Island Technology® die
- Ultra-low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V) with 7V tolerance
- Transient tolerant gate drive (-20 / +10 V) 1μs
- Very high switching frequency (> 10 MHz)
- Reverse current capability
- Zero reverse recovery loss
- Small 11 x 9 mm2 PCB footprint
- Source Sense (SS) pads for optimized gate drive
- Dual gate and source sense pads for optimal board layout
- RoHS...
