Datasheet Summary
TDG650E602TSP Space GaN E-mode Transistor
Product Specficaton
Features
- Class one / Level one Production Screening
- Lot Acceptance Test options available
- 650 V enhancement mode power transistor
- Top-cooled, low inductance GaNPX® package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency ( > 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 9 x 7.6 mm2 PCB footprint
- Dual gate pads for optimal board layout
Package Outline top view
Circuit Symbol
The thermal pad is internally connected...