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TSF8N65C Datasheet Preview

TSF8N65C Datasheet

7.5A 650V Insulated N-Channel Type Power MOSFETs

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TSF8N65C
®
TSF8N65C
Pb
Pb Free Plating Product
7.5A,650V Insulated N-Channel Type Power MOSFETs
Features
High ruggedness
RDS(on) (Max 1.0 )@VGS=10V
Gate Charge (Typical 48nC)
Improved dv/dt Capability
100% Avalanche Tested
1. Gate{
{ 2. Drain
{
◀▲
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings
BVDSS = 650V
RDS(ON) = 1.0 ohm
ID = 7.5A
TO-220F
DS
G
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
650
7.5
4.6
30
±30
560
14
4.5
140
1.14
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
0.88
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/




Thinki Semiconductor

TSF8N65C Datasheet Preview

TSF8N65C Datasheet

7.5A 650V Insulated N-Channel Type Power MOSFETs

No Preview Available !

TSF8N65C
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 4.5A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =7.5A, RG =25
see fig. 13.
(Note 4, 5)
VDS =480V, VGS =10V, ID =7.5A
see fig. 12.
(Note 4, 5)
Min
650
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.68
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
-
0.89
4.0
1
V
820 980
140 170
43 50
pF
32 70
85 160
70 145
65 120
48 55
6.8 -
25 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =7.5.0A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=7.5A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 22.3mH, IAS =7.50A, VDD = 50V, RG = 50, Starting TJ = 25°C
3. ISD 7.A5 , di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
400
2.9
Max.
7.5
30
1.4
-
-
Unit.
A
V
ns
uC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/


Part Number TSF8N65C
Description 7.5A 650V Insulated N-Channel Type Power MOSFETs
Maker Thinki Semiconductor
Total Page 6 Pages
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