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TSF8N65C - 7.5A 650V Insulated N-Channel Type Power MOSFETs

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(on) (Max 1.0 Ω )@VGS=10V.
  • Gate Charge (Typical 48nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1. Gate{ { 2. Drain { ◀▲.
  • { 3. Source General.

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Datasheet Details

Part number TSF8N65C
Manufacturer Thinki Semiconductor
File Size 969.75 KB
Description 7.5A 650V Insulated N-Channel Type Power MOSFETs
Datasheet download datasheet TSF8N65C Datasheet

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Full PDF Text Transcription (Reference)

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TSF8N65C ® TSF8N65C Pb Pb Free Plating Product 7.5A,650V Insulated N-Channel Type Power MOSFETs Features ■ High ruggedness ■ RDS(on) (Max 1.0 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1. Gate{ { 2. Drain { ◀▲ ● { 3. Source General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application. Absolute Maximum Ratings BVDSS = 650V RDS(ON) = 1.0 ohm ID = 7.