Low on-state resistance : Rds (on) = 0.3 Ω ( Vgs = -4.5V ) Rds (on) = 0.5 Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -.

Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP.

The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a ga.

XP152A12C0MR

XP152A12C0MR-G

XP152A11E5MR-G

XP152A01D8MR

XP1501

XP1504

XP1507

XP151A11B0MR

XP151A11B0MR-G

XP151A12A2MR

XP151A12A2MR-G

XP151A13A0MR

XP151A13A0MR-G

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