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XP152A12COMR - Power MOS FET

General Description

The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Key Features

  • Low on-state resistance : Rds (on) = 0.3 Ω ( Vgs = -4.5V ) Rds (on) = 0.5 Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D.

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Full PDF Text Transcription for XP152A12COMR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for XP152A12COMR. For precise diagrams, and layout, please refer to the original PDF.

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook ...

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ng Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.3 Ω ( Vgs = -4.5V ) Rds (on) = 0.5 Ω ( Vgs = -2.