Low on-state resistance : Rds (on) = 0.17 Ω ( Vgs = -4.5V ) Rds (on) = 0.3 Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V Gate protect diode bui.

Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP.

The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a ga.

XP162A12A6PR-G

XP162A11C0PR

XP162A11C0PR-G

XP1601

XP161A0390PR

XP161A11A1PR

XP161A11A1PR-G

XP161A1265PR

XP161A1265PR-G

XP161A1355PR

XP161A1355PR-G

XP1000

XP1000-BD