XP162A12A6PR Datasheet - Torex Semiconductor

Power MOSFET

XP162A12A6PR Features

* Low on-state resistance : Rds (on) = 0.17 Ω ( Vgs = -4.5V ) Rds (on) = 0.3 Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V Gate protect diode built-in High density mounting : SOT - 89 u Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain S

XP162A12A6PR General Description

The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 pac.

XP162A12A6PR Datasheet (52.79 KB)

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Part number:

XP162A12A6PR

Manufacturer:

Torex Semiconductor

File Size:

52.79 KB

Description:

Power mosfet.
P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package .

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XP162A12A6PR Power MOSFET Torex Semiconductor

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XP162A12A6PR Features

XP162A12A6PR General Description

Datasheet Details

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