Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z Low forward voltage z Low reverse current z Small total capacitance
: VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF...
- Part: 1SS406
- Description: Schottky Barrier Diode
- Manufacturer: Toshiba
- Size: 204.41 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
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