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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS412
General-Purpose Rectifier Applications
1SS412
Unit: imm
z Low forward voltage z Low reverse current z Small total capacitance z Small package
: VF = 1.0 V (typ.) : IR = 0.1 nA (typ.) : CT = 3.0 pF (typ.) : SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation
IFM IO IFSM P
300 * 100 *
1* 100
mA mA A mW
Junction temperature Storage temperature range
Tj 150 °C JEDEC Tstg −55 to 150 °C JEITA
― SC-70
Note: Using continuously under heavy loads (e.g.
1SS412 Datasheet
