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Schottky Barrier Diode Silicon Epitaxial
1SS416
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS416
1: Cathode 2: Anode
1: Cathode 2: Anode
Start of commercial production
2003-06
1
2014-07-08
Rev.3.0
1SS416
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
35
V
Reverse voltage
VR
30
Peak forward current
IFM
200
mA
Average rectified current
IO
100
mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to 125
Operating temperature
Topr
-40 to 100
Note: Using continuously under heavy loads (e.g.
1SS416 Datasheet
