| Part number | 1SS416CT |
|---|---|
| Datasheet | 1SS416CT-Toshiba.pdf |
| File Size | 195.99 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA 0.6±0.05 1SS416CT Unit: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension of 4 mm × 4 mm.
| Part Number | Description |
|---|---|
| 1SS416 | Schottky Barrier Diode |
| 1SS412 | Silicon Diode |
| 1SS413 | Schottky Barrier Diode |
| 1SS413CT | Schottky Barrier Diode |
| 1SS417 | Schottky Barrier Diode |
| 1SS417CT | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS418 | Silicon Diode |
| 1SS419 | Silicon Diode |
| 1SS403E | Silicon Epitaxial Planar Switching Diodes |
| 1SS405 | Schottky Barrier Diode |
