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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416CT
High Speed Switching Application
z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
0.6±0.05
1SS416CT
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P*
35
V
30
V
200
mA
100
mA
1
A
100
mW
Junction temperature Storage temperature range Operating temperature range
Tj
125
°C
Tstg
−55 to 125
°C
Topr
−40 to 100
°C
*:
Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
0.38
+0.02 -0.03
0.5±0.03 0.
1SS416CT Datasheet
