Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
0.6±0.05
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65...
- Part: 1SS416CT
- Description: Silicon Epitaxial Schottky Barrier Type Diode
- Manufacturer: Toshiba
- Size: 195.99 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 1SS416 | Schottky Barrier Diode |
| 1SS412 | Silicon Diode |
| 1SS413 | Schottky Barrier Diode |
| 1SS413CT | Schottky Barrier Diode |
| 1SS417 | Schottky Barrier Diode |