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| Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.) • Complementary to 2SC495 and 2SC496. 2SA496 2SA505, 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage 2SA505 2SA496 Collector-Emitter Voltage Emitter-Base Voltage Collector Current 2SA505 2SA496 Emitter C... |
| Features |
• Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.) • Complementary to 2SC495 and 2SC496. 2SA496 2SA505, 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage 2SA505 2SA496 Collector-Emitter Voltage Emitter-Base Voltage Collector Current 2SA505 2SA496 Emitter Current Collector Power Dissipation Jun... |
| Datasheet |
 2SA505 Datasheet - 91.85KB |
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