2SC2509 transistor equivalent, silicon npn epitaxial planar type transistor.
. Specified 12.5V, 28MHz Characteristics
: Output Power : P o =10WpeP : Minimum Gain : Gpe = 14dB : Efficiency : ? c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Ma.
(LOW SUPPLY VOLTAGE USE)
FEATURES . Specified 12.5V, 28MHz Characteristics
: Output Power : P o =10WpeP : Minimum Gain .
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