2SC2509 Datasheet, transistor equivalent, Toshiba

2SC2509 Features

  • Transistor . Specified 12.5V, 28MHz Characteristics : Output Power : P o =10WpeP : Minimum Gain : Gpe = 14dB : Efficiency : ? c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Max. MAXIMUM RAT

PDF File Details

Part number:

2SC2509

Manufacturer:

Toshiba (https://www.toshiba.com/)

File Size:

68.46kb

Download:

📄 Datasheet

Description:

Silicon npn epitaxial planar type transistor.

Datasheet Preview: 2SC2509 📥 Download PDF (68.46kb)
Page 2 of 2SC2509

2SC2509 Application

  • Applications (LOW SUPPLY VOLTAGE USE) FEATURES . Specified 12.5V, 28MHz Characteristics : Output Power : P o =10WpeP : Minimum Gain : Gpe = 14dB :

TAGS

2SC2509
Silicon
NPN
epitaxial
planar
type
Transistor
Toshiba

📁 Related Datasheet

2SC2500 - TRANSISTOR (Toshiba Semiconductor)
.DataSheet.co.kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Medium-Power Amplifier App.

2SC2500 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC2500 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,,。 High DC cur.

2SC2500 - NPN Transistor (JCET)
JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2500 TRANSISTOR (NPN) FEATURES z Strobe Flash Appl.

2SC2501 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·G.

2SC2502 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SC2502 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-.

2SC2504 - Transistor (Shindengen)
.

2SC2506 - Transistor (SHINDENGEN)
.

2SC2508 - Silicon NPN POWER TRANSISTOR (HGSemi)
H G Semiconductors HG RF POWER TRANSISTOR 2SC2508 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condit.

2SC2508 - Silicon NPN Transistor (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) ( f=l 75MHz, VCC=12.5V, P±=4.2W ) .

2SC2510 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Spe.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts