2SC2531 - Silicon NPN Transistor

Toshiba

Key Features

. Specified 28V, 28MHz Characteristics : Output Power : P o =150WpeP : Minimum Gain : Gpe=12.2dB : Efficiency : ^ c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Max. Unit in mm.

2SC2531 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2531
Manufacturer	Toshiba
File Size	66.08 KB
Description	Silicon NPN Transistor
Datasheet	2SC2531 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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:) SILICON NPN EPITAXIAL PLANAR TYPE ) 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE) FEATURES . Specified 28V, 28MHz Characteristics : Output Power : P o =150WpeP : Minimum Gain : Gpe=12.2dB : Efficiency : ^ c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Max. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO V CES v CEO v EBO RATING 60 60 35 20 PC 250 Tstg 175 -65-175 UNIT °C JEDEC 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR EIA J TOSHIBA 2— 13B1A Weight : 5.