2SC2509
2SC2509 is Silicon NPN epitaxial planar type Transistor manufactured by Toshiba.
FEATURES
. Specified 12.5V, 28MHz Characteristics
: Output Power : P o =10Wpe P : Minimum Gain : Gpe = 14d B : Efficiency : ? c =35%(Min. : Intermodulation Distortion : IMD=-30d B(Max.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCES VCEO VEBO ic PC
Tstg
RATING 40 40 18
20 150
-55 ~150
UNIT
Unit in mm
^6 10. 3 MAX j Z)3.6±ag
;
1.5 MAX
<
OJ e i
"U
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
T0-220AB
TOSHIBA
2- 10A1B
Weight : 1.9g
Mounting Kit No. AC75
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
SYMBOL v (BR) CEO V(BR)CES V(BR)EB0
DC Current Gain h FE
Transition Frequency f T
Collector Output Capacitance Cob
Power Gain
Gpe
'Input...
