2SC2550 Description
I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
2SC2550 Key Features
- High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA
- plementary to 2SA1090
- 7, TB 8C
- 0.1 UA
- 0.1 VA
- 0.3 0.5
- 3.0 4.0 pF
- Switching Time Storage Time Fall Time
- Note : hEE (i) Classification
- 2SC2550