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I
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
2SC2550
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
FEATURES . High Breakdown Voltage : VCEO=50V, VEB0=8V • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA • Complementary to 2SA1090.
Iln it in mm
05.8MAX. 04.95MAX.
25
00.45
[|[
j2fe.54
MAXIMUM RATINGS
fTa=25°r.^
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Base Current Collector Power Dissipation Junction Temperature
Storage Temperature Range
SYMBOL v CBO vCEO v EBO XC
IB PC T
J
T stg
RATING 60 50
8
200
50 300 175 -65VL75
UNIT V
V
1. EMITTER
V
2. BASE
3. COLLECTOR (CASE)
mA
TO 18
mA
TC — 7, TB 8C
mW
°C
2 - 5A IB
Weight : 0.
2SC2550 Datasheet
