2SC2550
2SC2550 is Silicon NPN Transistor manufactured by Toshiba.
Features
. High Breakdown Voltage : VCEO=50V, VEB0=8V
- High Gain and Excellent h EE Linearity h FE- 70^400 at VCE=1V, I c=10m A
- plementary to 2SA1090.
Iln it in mm
05.8MAX. 04.95MAX.
[|[ j2fe.54
MAXIMUM RATINGS f Ta=25°r.^
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Base Current Collector Power Dissipation Junction Temperature
Storage Temperature Range
SYMBOL v CBO v CEO v EBO XC
IB PC T
T stg
RATING 60 50
50 300 175 -65VL75
UNIT V
1. EMITTER
2. BASE
3. COLLECTOR (CASE) m A
TO 18 m A
- 7, TB 8C m W
°C
- 5A IB
Weight : 0.31g °C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
SYMBOL
I CB0 l EBO h FE(l) (Note) h FE(2) v CE(sat)
TEST CONDITION VC B=60V, I E=0 VEB=5V, I C=0 Vce= 1v . Ic=10m A Vc E=lv, Ic=100m A
I c=200m A, IB=20m A
MIN. TYP. MAX. UNIT
- - 0.1 UA
- - 0.1 VA
-...
