* . High Breakdown Voltage : VCEO=50V, VEB0=8V
* High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA
* Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54 MAXIMUM RATINGS fTa=25°r.^ CHARACTERISTIC Collector-Base Voltage Collector-Emitt
2SC2550
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Silicon npn transistor.
: I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICA.
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