Datasheet4U Logo Datasheet4U.com

2SC2550 - Silicon NPN Transistor

Datasheet Summary

Features

  • . High Breakdown Voltage : VCEO=50V, VEB0=8V.
  • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA.
  • Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54.

📥 Download Datasheet

Datasheet preview – 2SC2550

Datasheet Details

Part number 2SC2550
Manufacturer Toshiba
File Size 122.17 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2550 Datasheet
Additional preview pages of the 2SC2550 datasheet.

📁 Similar Datasheet

  • 2SC2551 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC2551 - NPN Transistor (SeCoS)
  • 2SC2551 - NPN Transistor (LGE)
  • 2SC2552 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC2552 - NPN Transistor (INCHANGE)
  • 2SC2552 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2553 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2553 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SC2555 - TRANSISTOR (Toshiba Semiconductor)
  • 2SC2555 - Silicon NPN Power Transistors (Inchange Semiconductor)
Other Datasheets by Toshiba
  • 2SC2553 - Silicon NPN Transistor
  • 2SC2508 - Silicon NPN Transistor
  • 2SC2509 - Silicon NPN epitaxial planar type Transistor
  • 2SC2531 - Silicon NPN Transistor
  • 2SC2562 - Silicon NPN Transistor
  • 2SC2563 - Silicon NPN Transistor
  • 2SC2564 - Silicon NPN Transistor
  • 2SC2565 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
: I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES . High Breakdown Voltage : VCEO=50V, VEB0=8V • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA • Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54 MAXIMUM RATINGS fTa=25°r.^ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO vCEO v EBO XC IB PC T J T stg RATING 60 50 8 200 50 300 175 -65VL75 UNIT V V 1. EMITTER V 2. BASE 3. COLLECTOR (CASE) mA TO 18 mA TC — 7, TB 8C mW °C 2 - 5A IB Weight : 0.
Published: |