• Part: 2SD1358
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 116.66 KB
Download 2SD1358 Datasheet PDF
Toshiba
2SD1358
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1357 2SD1358 I2SD1359 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURESr . High DC Current Gain: h FE=20O0(Min. ) (at Vc E=3V, Ic=3A) . Low Saturation Voltage: Vc E(sat)=l - 5V(Max. ) (at Ic=3A) . plementary to 2SB997, 2SB998, 2SB999 INDUSTRIAL APPLICATIONS Unit in mm , j.Q.3Mjg : MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SD1357 2SD1358 2SD1359 Vc BO Collector-Emitter Voltage 2SD1357 2SD1358 2SD1359 VCEO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO ic IB ?C T.i T fitg Tt ^5k Q ELECTRICAL CHARACTERISTICS (Ta=25°c) CHARACTERISTIC SYMBOL Collector Cut-off Current 2SD1357 2SD1358 2SD1359 ICBO Emitter Cut-off Current l EBO Collector-Emitter Breakdwon Voltage 2SD1357 2SD1358 2SD1359 V (BR) CEO DC Current Gain Collector-Emitter...