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2SD1358 - Silicon NPN Transistor

Download the 2SD1358 datasheet PDF. This datasheet also covers the 2SD1357 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • . High DC Current Gain: hFE=20O0(Min. ) (at VcE=3V, Ic=3A) . Low Saturation Voltage: VcE(sat)=l.
  • 5V(Max. ) (at Ic=3A) . Complementary to 2SB997, 2SB998, 2SB999.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD1357-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD1358
Manufacturer Toshiba
File Size 116.66 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1358 Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SD1353 Silicon NPN Transistor
2SD1354 Silicon NPN Transistor
2SD1355 Silicon NPN Transistor
2SD1356 Silicon NPN Transistor
2SD1357 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1357 2SD1358 I2SD1359 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURESr . High DC Current Gain: hFE=20O0(Min. ) (at VcE=3V, Ic=3A) . Low Saturation Voltage: VcE(sat)=l • 5V(Max. ) (at Ic=3A) . Complementary to 2SB997, 2SB998, 2SB999 INDUSTRIAL APPLICATIONS Unit in mm , j.Q.3Mjg : MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SD1357 2SD1358 2SD1359 VcBO Collector-Emitter Voltage 2SD1357 2SD1358 2SD1359 VCEO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO ic IB ?C T.
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