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Toshiba Electronic Components Datasheet

DF2S5.1ASL Datasheet

ESD Protection Diode

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ESD Protection Diodes Silicon Epitaxial Planar
DF2S5.1ASL
DF2S5.1ASL
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Cathode
2: Anode
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Electrostatic discharge voltage (IEC61000-4-2)(Air)
VESD (Note 1)
±30
kV
Peak pulse power(tp = 8/20 µs)
Peak pulse current(tp = 8/20 µs)
Junction temperature
Storage temperature
PPK
IPP (Note 2)
Tj
Tstg
30
2.5
150
-55 to 150
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
©2015 Toshiba Corporation
1
Start of commercial production
2015-11
2015-12-11
Rev.1.0


Toshiba Electronic Components Datasheet

DF2S5.1ASL Datasheet

ESD Protection Diode

No Preview Available !

4. Electrical Characteristics (Unless otherwise specified, Ta = 25)
VRWM: Working peak reverse
voltage
VZ: Zener voltage
VBR: Reverse breakdown voltage
ZZ: Dynamic impedance
IZ: Zener current
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
IF: Forward current
VF: Forward voltage
DF2S5.1ASL
Fig. 4.1 Definitions of Electrical Characteristics
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Working peak reverse voltage
VRWM
   1.5 V
Zener voltage
(Reverse breakdown voltage)
VZ
(VBR)
IZ = 5 mA
(IBR = 5 mA)
4.8 5.1 5.4
V
Dynamic impedance
ZZ IZ = 5 mA
(IBR = 5 mA)
  70
Reverse current
IR VRWM = 1.5 V
  1 µA
Clamp voltage
VC (Note 1) IPP = 1 A
5.5
V
IPP = 2.5 A
6.5 12
Clamp voltage
VC (Note 2) ITLP = 16 A
10
V
ITLP = 30 A
13
Dynamic resistance
RDYN (Note 2)
0.2
Total capacitance
Ct (Note 3) VR = 0 V, f = 1 MHz
45 pF
Note 1: Based on IEC61000-4-5 8/20 µs pulse.
Note 2: TLP parameter: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A.
Note 3: Guaranteed by design.
©2015 Toshiba Corporation
2
2015-12-11
Rev.1.0


Part Number DF2S5.1ASL
Description ESD Protection Diode
Maker Toshiba
Total Page 8 Pages
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