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GT35J321
www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT35J321
Fourth-generation IGBT Current Resonance Inverter Switching Applications
z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector−emitter voltage Gate−emitter voltage Collector current (DC) @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP DC Pulse @ Tc = 100°C @ Tc = 25°C IF IFP PC Tj Tstg Rating 600 ±25 18 37 100 20 40 30 75 150 −55 to 150 Unit V V A A A 1. GATE 2. COLLECTOR 3.
GT35J321 Datasheet
