HN2S02FU - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	HN2S02FU
Manufacturer	Toshiba
File Size	193.46 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	HN2S02FU Datasheet

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU High Speed Switching Application HN2S02FU Unit: mm z HN2S02FU is composed of 3 independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C JEITA ― Operating temperature range Topr −40 to 100 °C TOSHIBA 1-2T1C Note: Using continuously under heavy loads (e.g.