HN2S03FU - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	HN2S03FU
Manufacturer	Toshiba
File Size	204.51 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	HN2S03FU Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HN2029CG	(HN20xxCG) 10/100 Base-T Dual Port Transformer	Mingtek
HN2063CG	(HN20xxCG) 10/100 Base-T Dual Port Transformer	Mingtek
HN2064CG	(HN20xxCG) 10/100 Base-T Dual Port Transformer	Mingtek
HN2066CG	(HN20xxCG) 10/100 Base-T Dual Port Transformer	Mingtek
HN2067CG	(HN20xxCG) 10/100 Base-T Dual Port Transformer	Mingtek

Other Datasheets by Toshiba

Part Number	Description
HN2S01F	Silicon Epitaxial Schottky Barrier Type Diode
HN2S01FU	Silicon Epitaxial Schottky Barrier Type Diode
HN2S02FU	Silicon Epitaxial Schottky Barrier Type Diode
HN2S02JE	Silicon Epitaxial Schottky Barrier Type Diode
HN2S04FU	Epitaxial Schottky Barrier Type Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 * mA Average forward current IO 50 * mA Surge current (10ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C JEITA ― Operating temperature range Topr −40 to 110 °C TOSHIBA 1-2T1C Weight: 6.2 mg (typ.