HN2S03FU Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is posed of 3 independent diodes. VF (3) = 0.50V (typ.) z Low reverse current.
- Part: HN2S03FU
- Manufacturer: Toshiba (official site)
- Size: 204.51 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S02FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S02JE | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S04FU | Epitaxial Schottky Barrier Type Diode |