HN2S02JE - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	HN2S02JE
Manufacturer	Toshiba
File Size	192.42 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	HN2S02JE Datasheet

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current Surge current (10ms) Power dissipation Junction temperature IO IFSM P Tj 100 * mA 1* A 100 ** mW 125 °C 1.ANODE1 2.NC 3.ANODE2 4.CATHODE2 5.CATHODE1 Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g.