Silicon Epitaxial Schottky Barrier Type Diode
| Part number | HN2S02JE |
|---|---|
| Manufacturer | Toshiba |
| File Size | 192.42 KB |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
| Datasheet | HN2S02JE-Toshiba.pdf |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is posed of two independent diodes. VF (3) = 0.54V (typ.) z Low reverse current: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| HN2S02FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S03FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S04FU | Epitaxial Schottky Barrier Type Diode |
| HN20S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN20S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2A01FU | Silicon PNP Epitaxial Type Transistor |
| HN2D01F | Silicon Epitaxial Planar Type Diode |
| HN2D01FU | Silicon Epitaxial Planar Type Diode |
