HN2S04FU Description
TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. VF (3) = 0.36V (typ.) z Low reverse current:.
- Part: HN2S04FU
- Manufacturer: Toshiba (official site)
- Size: 203.58 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S02FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S02JE | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S03FU | Silicon Epitaxial Schottky Barrier Type Diode |