HN2S01F Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is posed of 3 independent diodes. Using continuously under heavy loads (e.g.
- Part: HN2S01F
- Manufacturer: Toshiba (official site)
- Size: 227.17 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S02FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S02JE | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S03FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S04FU | Epitaxial Schottky Barrier Type Diode |