HN2S02FU Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU High Speed Switching Application HN2S02FU Unit: mm z HN2S02FU is posed of 3 independent diodes. VF (3) = 0.54V (typ.) z Low reverse current:.
- Part: HN2S02FU
- Manufacturer: Toshiba (official site)
- Size: 193.46 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| HN2S02JE | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01F | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S01FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S03FU | Silicon Epitaxial Schottky Barrier Type Diode |
| HN2S04FU | Epitaxial Schottky Barrier Type Diode |