HN2S02JE
HN2S02JE is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High-speed Switching Applications z HN2S02JE is posed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current Surge current (10ms) Power dissipation Junction temperature
IO IFSM
P Tj
- m A
1-
- - m W
°C
1.ANODE1 2.NC 3.ANODE2 4.CATHODE2 5.CATHODE1
Storage temperature range
Tstg
- 55 to 125
°C
Operating temperature range
Topr
- 40 to 100
°C
JEDEC
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Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA
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TOSHIBA...
