Title | |
Description | TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage V... |
Features |
/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabil...
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Datasheet | HN2S04FU Datasheet - 203.58KB |
Distributor |
Quest Components |
Stock | 50078 In stock |
Price |
14067 units: 0.0975 USD 6155 units: 0.1138 USD 1 units: 0.65 USD
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BuyNow | BuyNow - Manufacturer a Toshiba America Electronic Components HN2S04FU(TE85L.F) |
Distributor | Stock | Price | BuyNow |
---|---|---|---|
Quest Components |
14067 units: 0.0975 USD 6155 units: 0.1138 USD 1 units: 0.65 USD |
BuyNow |
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Component Electronics, Inc |
No price available |
BuyNow |