• Part: HN2S04FU
  • Description: Epitaxial Schottky Barrier Type Diode
  • Manufacturer: Toshiba
  • Size: 203.58 KB
Download HN2S04FU Datasheet PDF
HN2S04FU page 2
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HN2S04FU page 3
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Datasheet Summary

TOSHIBA Diode Epitaxial Schottky Barrier Type High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF...