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TOSHIBA Diode Epitaxial Schottky Barrier Type
HN2S04FU
HN2S04FU
High-Speed Switching Application
Unit: mm
z The HN2S04FU consists of three separate diodes.
z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
450 *
mA
Average forward current
IO
200 *
mA
Surge current (10 ms)
IFSM
1*
A
Power dissipation
P
200 **
mW
Junction temperature
Tj
125
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 125
°C
JEITA
―
Operating temperature range
*: Per one diode.
Topr
−40 to 100
°C
TOSHIBA
1-2T1C
Weight: 0.
HN2S04FU Datasheet
