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HN2S04FU Toshiba (https://www.toshiba.com/) Epitaxial Schottky Barrier Type Diode

Title
Description TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage V...
Features /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabil...

Datasheet PDF File HN2S04FU Datasheet - 203.58KB
Distributor Distributor
Quest Components
Stock 50078 In stock
Price
14067 units: 0.0975 USD
6155 units: 0.1138 USD
1 units: 0.65 USD
BuyNow BuyNow BuyNow - Manufacturer a Toshiba America Electronic Components HN2S04FU(TE85L.F)

HN2S04FU   HN2S04FU   HN2S04FU  



HN2S04FU Distributor

Distributor Stock Price BuyNow
Distributor
Quest Components
50078
14067 units: 0.0975 USD
6155 units: 0.1138 USD
1 units: 0.65 USD
Toshiba America Electronic Components

BuyNow
Distributor
Component Electronics, Inc
130
No price available
Toshiba America Electronic Components

BuyNow




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