• Part: HN4C05JU
  • Description: Multi Chip Discrete Device
  • Manufacturer: Toshiba
  • Size: 142.81 KB
Download HN4C05JU Datasheet PDF
Toshiba
HN4C05JU
TOSHIBA Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications Unit in mm l Low saturation voltage l High current : VCE (sat) (1) = 15m V (typ.) @IC = 10m A / IB = 0.5m A : IC = 400m A (max) Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range (- ) Total rating Symbol VCBO VCEO VEBO IC IB PC (- ) Tj Tstg Rating Unit 400 m A 50 m A 200 m W °C - 55~125 °C JEDEC EIAJ TOSHIBA Weight: 6.2 mg ― ― 2-2L1A Marking Pin Assignment (Top View) 000707EAA1 - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the...