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HN4C06J Datasheet - Toshiba

HN4C06J Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) z Low noise : NF = 1dB(typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage .

HN4C06J Datasheet (338.37 KB)

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Datasheet Details

Part number:

HN4C06J

Manufacturer:

Toshiba ↗

File Size:

338.37 KB

Description:

Silicon npn epitaxial type transistor.

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HN4C06J Silicon NPN Epitaxial Type Transistor Toshiba

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