HN4A06J Silicon PNP Epitaxial Type Transistor

Toshiba

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J HN4A06J Audio Frequency General Purpose Amplifier Applications z High voltage : .

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Datasheet Specifications

Part number: HN4A06J
Manufacturer: Toshiba ↗
File Size: 313.22 KB
Datasheet: HN4A06J-Toshiba.pdf
Description: Silicon PNP Epitaxial Type Transistor

Applications

* z High voltage : VCEO =
* 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC =
* 0.1mA) / hFE (IC =
* 2mA) = 0.95 (typ. ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO

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HN4A06J Silicon PNP Epitaxial Type Transistor Toshiba

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