HN4B06J Datasheet - Toshiba

HN4B06J Silicon NPN/PNP Epitaxial Type Transistor

HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q1 Absolut.

HN4B06J Datasheet (545.17 KB)