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HN4B06J Datasheet - Toshiba

HN4B06J-Toshiba.pdf

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Datasheet Details

Part number:

HN4B06J

Manufacturer:

Toshiba ↗

File Size:

545.17 KB

Description:

Silicon npn/pnp epitaxial type transistor.

HN4B06J, Silicon NPN/PNP Epitaxial Type Transistor

HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q1 Absolut

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