HN4B102J Datasheet - Toshiba

HN4B102J Silicon PNP/NPN Transistor

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications Small footprint due to a small and thin package High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max) : NPN VCE (sat) = 0.14 V (max) High-speed switching : PNP tf = 40 ns (typ.) : NPN tf = 45 ns (typ.) 2.9±0.2 1.9±0.2 0..

HN4B102J Features

* design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

HN4B102J Datasheet (212.82 KB)